| PART |
Description |
Maker |
| AM82731-025 2768 |
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| AM83135-005 2897 |
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:10 x 30; Jacket Color:Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061, CSA Type AWM; Conductor Material:Copper; Conductor Plating:Tin RoHS Compliant: Yes
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| AM82731-012 |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
|
STMicroelectronics
|
| AM2931-110 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
|
SGS Thomson Microelectronics
STMicroelectronics
|
| AM1214-250 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
STMicroelectronics
ST Microelectronics
SGS Thomson Microelectronics
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BLL1214-250 |
L-band radar LDMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BLS6G3135-20 BLS6G3135S-20 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors
|
| BLL6H1214-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
| BLS6G2731S-120 BLS6G2731-120 |
LDMOS S-band radar power transistor
|
NXP Semiconductors N.V.
|
